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STQ1NE10L
N-channel 100V - 0.3 - 1A - TO-92 STripFETTM Power MOSFET
General features
Type STQ1NE10L

VDSS 100V
RDS(on) <0.4
ID 1A
Exceptional high dv/dt capability 100% avalanche tested Avalanche rugged technology Low threshold drive
TO-92
Description
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Internal schematic diagram
Applications
Switching application
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Part number STQ1NE10L STQ1NE10L-AP Marking Q1NE10L Q1NE10L Package TO-92 TO-92 Packaging Tube Ammopak
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TO-92 (Ammopack)
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January 2007
Rev 5
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Contents
STQ1NE10L
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDG IGS IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain gate current (continuous) Gate source current (continuous) Drain current (pulsed) Value 100 16 1 0.6 50 50 4 3 0.025 6 400 Unit V V A A mA mA A
PTOT(2) Total dissipation at TC = 25C Derating factor dv/dt(3) EAS(4) Tstg TJ Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Operating junction temperature
1. Pulse width limited by safe operating area. 2. 3. Related to Rthj -l ISD 1A, di/dt 200A/s, VDD V(BR)DSS, TJ TJMAX
4. Starting TJ = 25 oC, ID = 1A, VDD = 50V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
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Parameter
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-55 to 150
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W
W/C V/ns mJ C
Value 40 125 260
Unit C/W C/W C
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Electrical characteristics
STQ1NE10L
2
Electrical characteristics
(TCASE = 25C unless otherwise specified) Table 3.
Symbol V(BR)DG IDSS
On/off states
Parameter Clamped voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source ON resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating TC = 125C VGS = 16 V VDS = VGS, ID = 250A VGS = 10 V, ID = 0.5 A VGS = 5 V, ID = 0.5 A 1 0.30 0.35 Min. 100 1 10 100 2.5 0.40 0.45 Typ. Max. Unit V A A nA V
IGSS VGS(th) RDS(on)
Table 4.
Symbol gfs Ciss Coss Crss tr(on) tf td(off) tf Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Rise time Test conditions VDS = 15 V, ID = 0.5 A
Turn-off delay time Fall time
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Total gate charge Gate-source charge Gate-drain charge
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VDS = 25 V, f = 1MHz, VGS = 0
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Typ. 2 345 45 20 11 12 20 13 7 1.5 3.5
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Max.
Unit S pF pF pF ns ns ns ns ns nC nC nC
VDD = 50 V, ID = 0.5 A, RG = 4.7 , VGS = 10 V Figure 12 VDD = 50 V, ID = 0.5 A RG = 4.7, VGS = 5 V Figure 12
VDD = 80 V, ID = 1A, VGS = 5V Figure 13
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Electrical characteristics
Table 5.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1A, VGS=0 ISD = 1A, di/dt = 100A/s, VDD=30V, TJ = 100C 52 90 3.5 Test conditions Min. Typ. Max 1 4 1.5 Unit A A V ns nC A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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Electrical characteristics
STQ1NE10L
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
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Static drain-source on resistance
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STQ1NE10L Figure 7. Gate charge vs. gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs. temperature
Figure 10. Normalized on resistance vs. temperature
Figure 11. Source-drain diode forward characteristics
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Test circuit
STQ1NE10L
3
Test circuit
Figure 13. Gate charge test circuit
Figure 12. Switching times test circuit for resistive load
Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit
Figure 16. Unclamped inductive waveform
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Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STQ1NE10L
TO-92 MECHANICAL DATA
mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 inch TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094
DIM. A b D E e e1 L R S1 W V
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0.022
0.060
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Package mechanical data
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Revision history
STQ1NE10L
5
Revision history
Table 6.
Date 21-Jun-2004 31-Oct-2006 31-Jan-2007
Revision history
Revision 3 4 5 Complete version Document has been reformatted Typo mistake on Table 1. Changes
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